The new enhancement-mode GaN transistors combine low on-resistance, compact FCLGA packaging and options for dual-side cooling.
Renesas Electronics has expanded its REXGaN family of 100 V gallium-nitride power transistors for high-density power conversion, motor-control and data-centre applications.
The new enhancement-mode devices are designed for low-voltage, high-current stages used in 48 V and 54 V power systems. Such stages are increasingly important in AI data centres, electric-motor drives, battery-powered equipment and industrial power supplies, where switching losses and thermal resistance directly affect converter efficiency and size.
The portfolio includes devices with typical on-resistance values ranging from 1.2 mΩ to 5 mΩ. Renesas offers compact FCLGA packages in standard configurations as well as dual-side-cooled versions for higher-current applications.
The RTP100E005G1FL, for example, is a 100 V, 5 mΩ transistor in a 3.3 × 3.3 mm package. It uses Renesas’ first-generation REXGaN platform and is intended to provide high-speed switching with low gate and output charge. The component also has zero reverse-recovery charge, a characteristic that can help reduce losses in high-frequency switching circuits.
The low-resistance variants use advanced packaging to improve thermal performance. The 1.2 mΩ and 1.8 mΩ devices incorporate dual-side cooling, allowing heat to be removed through both sides of the package and giving designers more flexibility in high-power-density converter layouts.
Renesas says the devices use silicon-compatible footprints, enabling engineers to evaluate GaN technology in designs that have traditionally relied on silicon MOSFETs. Higher switching frequencies can reduce the size of magnetics and other passive components, helping power-system designers increase density without proportionally increasing board area.
The products are listed by Renesas as active and available to order.
Image credit: Renesas Electronics
