Heat dissipation reduced by 40%
Toshiba Electronics Europe has introduced two N-channel MOSFETs for load switches in mobile devices that deliver class-leading [1] low on-resistance. The SSM6K513NU and SSM6K514NU help contribute to high system efficiency, low power consumption and are ideally suited for use in the latest battery operated portable applications.
Use of Toshiba’s ‘U-MOS IX-H series’ trench process ensures that the MOSFETs achieve low on-resistances. RDS(ON) rating are 6.5mΩ for the 30V SSM6K513NU and 8.9mΩ for the 40V SSM6K514NU. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% when compared with Toshiba’s existing products, such as the SSM6K504NU.
The SSM6K513NU and SSM6K514NU are suitable for use in electric power switching applications over 10W, including small-size mobile devices that meet the USB Type-C™ and USB Power Delivery (PD) standards. Both MOSFETs are housed in compact SOT-1220 packages.
[1] For products with the same ratings, as of September 26, 2016. Toshiba survey.
*USB Type-C is a trademark of the USB Implementers Forum.
Collaboration aims to accelerate Europe’s adoption of chiplets and advanced 2.5D and 3D chip packaging…
NVIDIA will continue to distribute SchedMD’s open-source, vendor-neutral Slurm software, ensuring wide availability for high-performance…
Powered by Stratasys (NASDAQ: SSYS) technology, Airbus is producing more than 25,000 flight-ready 3D-printed parts…
Funding will support Quantum Art in reaching a 1,000-qubit commercial platform and global expansion Quantum…
Hud automatically captures live service and function-level data from production- providing the missing context for…
General Atlantic leads round valuing company at $800M as Port tackles the 90% of developer…