Navitas Previews Advances in GaN and SiC Technologies, Including Industry’s First 8.5 kW AI Data Center Power Supply at electronica 2024

Explore the latest GaN and SiC technologies to ‘Electrify Our World’ & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW

Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12^th– 15^th).

Aligned with the mission to ‘Electrify our World™’, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for AI data centers, EV transportation, renewable energy, industrial drives, and consumer appliances. Each example highlights end-user benefits such as higher power density, increased efficiency, longer range, faster charging, portability, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO₂ by 2050.

Major technology updates include the world’s first 8.5 kW power supply for AI and hyperscale data centers, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs.

Enabled by over 20 years of SiC innovation leadership, GeneSiC technology offers world leading performance over temperature to provide cool-running, fast-switching SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs. The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology offering leading performance, while also providing superior robustness, manufacturability and cost than competition. Gen-3 Fast MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.

Also on display will be the company’s latest development of GaNSense™ Motor Drives ICs for home appliance and industrial, 650V bi-directional GaN demonstrator for next generation, highest efficiency and power density solutions, as well as newly released SiCPAK™ modules for high-power markets such as power grid, renewables, EV charging, and UPS.

In addition to the exhibition, the company’s Llew Vaughan-Edmunds will take part in the EETimes panel debate ‘SiC & GaN Technologies – Exploring Advancements, Addressing Challenges’ (November 12^th, 2:20 pm local time). This debate will examine both recent and upcoming advances that will increase wide bandgap technologies’ share of the legacy silicon power IC market, which has been valued at $22bn/yr. The analyst house Yole Group predicts GaN and SiC products will make up 30% share of the power semi market by 2027.

electronica 2024 takes place at Trade Fair Center Messe München, Am Messesee 2, 81829 Munich, from November 12^th – 15^th. “Planet Navitas” is featured in Hall C3, booth #129.

To schedule a meeting with Navitas at electronica, email euro.sales@navitassemi.com

Credit:Navitas