Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.
A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.
PeakSpan Capital leads, joined by Vertex Ventures and Horizon Capital, as commercial and operations leaders…
New Sinamics G series creates a seamless platform for continuous-motion applications Security by Design helps…
See Samtec’s solutions in Hall B2, Booth 107 Samtec, Inc., the service leader in the…
Acquisition adds NeuReality's AI inference technology and world-class systems and silicon engineering team, compressing the…
The edgeRX Starter predictive maintenance (PdM) solution is now available at DigiKey.com DigiKey, the global…
The global distributor will also demo top products from Arduino, DFRobot, SparkFun and more DigiKey,…