Renesas Strengthens Active Antenna Systems Market Leadership with New RF Amplifier for 4G/5G Infrastructure Systems

TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today strengthened its robust RF Amplifiers portfolio with the new F1490 delivering much lower quiescent current (75 mA) than competitive solutions. The F1490 is a second-generation high-gain, 2-stage RF amplifier that covers the key sub-6 GHz 5G frequency bands from 1.8 GHz to 5.0 GHz. The F1490 benefits designers with simplified product selection for their transmitter (Tx) lineup, elimination of a gain block with better margin, two selectable gain modes for system design flexibility, lower power consumption, and superior performance.

“The F1490 delivers high gain with selectable modes and ultra-low power consumption, while maintaining high OP1dB performance and 2.4 dB noise figure, to meet all the system-level requirements customers want from their massive MIMO 5G pre-driver,” said Naveen Yanduru, Vice President of RF Communications, Industrial and Communications Business Division at Renesas. “We are excited to continue driving LTE and 5G innovation with our RF amplifier solutions for AAS, 4G/5G base stations, and other wireless communications equipment.”

Designed to operate within the 1.8 GHz and 5.0 GHz frequency range, the F1490 RF amplifier features high gain, high linearity, and wide bandwidth, and is well suited for use with both FDD and TDD sub-6 GHz 5G applications. The F1490’s pin-to-pin compatibility with current devices lowers the cost of design updates.