Texas Instruments (TI) (NASDAQ: TXN) today announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications. For more information, see https://www.ti.com/lmg3410r050-pr, https://www.ti.com/lmg3410r070-pr and https://www.ti.com/lmg3411r070-pr.
TI’s family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated <100-ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.
Key features and benefits of the LMG3410R050, LMG3410R070 and LMG3411R070
Visit TI at electronica
Texas Instruments is showcasing a 10-kW cloud-enabled grid link demonstration in Hall C4 – Booth 131 at electronica at Messe München in Germany, Nov. 13-16, 2018. Developed jointly by TI and Siemens, the active demonstration uses TI’s LMG3410R050 600-V GaN FET with integrated driver and protection, enabling engineers to achieve 99 percent efficiency and up to 30 percent reduction in power component size compared to a traditional silicon design.
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