ON Semiconductor Establishes Advanced Sensor Design Center in Europe

ositions the company to deliver next generation autonomous driving solutions

PHOENIX, Ariz. – March 7, 2017 – ON Semiconductor Corporation (Nasdaq: ON) driving energy efficient innovations, today announced it is establishing a new sensor fusion design center in Europe. This team has combined experience of more than 1,200 years in silicon design for digital and analog technologies. The center positions ON Semiconductor to extend its market leadership in image sensors for automotive ADAS and viewing applications with new capabilities in imaging and video signal processing for automated driving systems. By combining this design center with its recently acquired mmWave radar technology and design center in Israel, ON Semiconductor is uniquely positioned to provide sensor fusion solutions for next generation highly autonomous vehicles.

“The automotive image sensor market is growing rapidly driven through higher attach rates for ADAS and viewing systems and new applications for image sensors, such as driver monitoring, e-mirror and 360-degree sensing,” said Ross Jatou, vice president and general manager Automotive Solutions Division of the Image Sensor Group. “Expanding our design capacity positions us to extend our leadership in established segments and to deliver new, world-class solutions for emerging segments.”

The new United Kingdom design center for ON Semiconductor reports directly into the Automotive Solutions Division (ASD) within the Image Sensor Group. The new design center is located in Bracknell, England and expands a global sensor design footprint that now includes major locations in the United States, United Kingdom, Japan, India and Israel.