Radiation-hardened power-management device integrates comprehensive functionality in an ultra-small form factor
DALLAS (July 11, 2016) – Texas Instruments (TI) (NASDAQ:TXN) today introduced the industry’s first double-data-rate (DDR) memory linear regulator for space applications. The TPS7H3301-SP is the only DDR regulator immune to single-event effects up to 65 megaelectron volts per centimeter squared (MeV-cm2), powering space-satellite payloads including single-board computers, solid-state recorders and other memory applications. For more information or to download the radiation report, see ti.com/TPS7H3301-SP-pr-eu.
Integrating two monolithic power field-effect transistors (FETs) for source and sink termination and an internal voltage reference, the TPS7H3301-SP is up to 50 percent smaller than a switch-mode regulator DDR solution. To see a live demonstration of the new regulator and learn about other products from TI’s leading-edge radiation-hardened portfolio, visit Booth 43 during the 2016 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC), starting today.
Key features and benefits:
Tools and support to jump-start designs
Designers can reduce development time and quickly complete worst-case circuit analysis by downloading a full-capability linear regulator SPICE model.
Package, availability and pricing
The TPS7H3301-SP is available now in a 16-pin dual-ceramic flat package that is Qualified Manufacturer List (QML) Class V and 100 krad (silicon) radiation hardness assurance (RHA) qualified (5962R1422801VXC). You can obtain more information about this device from the Defense Logistics Agency. Please contact spacesample@list.ti.com for suggested retail pricing.
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